Our High Purity Diamond is used for the fabrication of high-quality NV centers.The extremely pure spin environment in such prepared NV centers results in exceptionally long coherence times.
This is our high purify diamond with polished faces {100}, {110}, {111}.
PARAMETER | ||
Element | Content | Notes |
N | < 50 ppb | Measured by ERP |
B | < 1 ppb | Measured by SIMS |
13C | 1.1% | Atural abundance |
12C | 98.9% | Natural abundance |
Thermal Properties | ||
Thermal conductivity | >2000 Wm-1K-1 | |
Coefficient of thermal expansion(300K) | 1.0±0.1 ppm·K-1 | |
Coefficient of thermal expansion(1000K) | 4.4±0.1 ppm·K-1 | |
Geometric properties | ||
Standard size | 2×2mm/3×3mm | |
Standard thickness | 0.5mm | |
Roughness(nm) upper and lower surface | Ra< 5 nm | |
Roughness(nm) side surfaces | Ra< 100 nm | |
Crystallographic orientation | 111 |
Features:
1. All parameters are measured in lab under the international standard;
2. The standard size can be customized up to 10×10mm;
3. The NV center densities can be customized from 500ppb to 5ppm ;
4. Widely used in quantum computing, precision measurement, semiconductor industry, life science etc.
HaiNan Neocrystech Co., Ltd. offers quantum-grade diamond products that contain deliberate and controlled levels of nitrogen-vacancy (NV) centres, including high-quality single and ensemble NV centres.
Our exclusive production features an internally dispersion of single NV centers (SNV) in a density between 10 and 300 per 10000 µm², with typical spin coherence times (T2) exceeding 300 µm and a long T2* of 1~3 µm. We support for customization in single NV density, diamond size, and preferred polished faces {100},{111} or {110}.
Our ENV diamonds contains high density NV centres varying from 500 ppb to 5 ppm, with T2 ranging from 100 to 200 µm and T2* of 0.5 µm. We offer customized diamonds with major {100},{111} or {110} in different densities.
Contact: Ms. Zhu
Phone: 86-15921669765
E-mail: peggy@neocrystech.com
Whatsapp:kogin
Add: 2000 North Zhongshan Road, Putuo District, Shanghai, China Room 820, Medium Term Building
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