peggy@neocrystech.com
86-15921669765
Product specifications can be customized according to customer requirements in terms of diamond size, Crystallographic orientation, NV concentration, NV depth, NV pattern, etc.
| PARAMETER | ||
| Element | Content | Notes |
| Typical NV center type | Single/Ensemble | |
| Typical NV center density | *** | |
| Typical spin coherence time（T2） | *** | |
| Typical spin coherence time（T2*） | *** | |
| Thermal Properties | ||
| Thermal conductivity | ＞2000 Wm-1K-1 | |
| Coefficient of thermal expansion(300K) | 1.0±0.1 ppm·K-1 | |
| Coefficient of thermal expansion(1000K) | 4.4±0.1 ppm·K-1 | |
| Geometric properties | ||
| Standard size | 2~10 mm | |
| Standard thickness | 0.05-1 mm | |
| Roughness(nm) upper and lower surface | Ra＜ 5 nm | |
| Roughness(nm) side surfaces | Ra＜ 100 nm | |
| Crystallographic orientation | 100 | |
Features：
1. All parameters are measured in lab under the international standard;
2. The standard size can be customized up to 10×10mm;
3. The NV center densities can be customized from 500ppb to 5ppm ;
4. Widely used in quantum computing, precision measurement, semiconductor industry, life science etc.
HaiNan Neocrystech Co., Ltd. offers quantum-grade diamond products that contain deliberate and controlled levels of nitrogen-vacancy (NV) centres, including high-quality single and ensemble NV centres.
Our exclusive production features an internally dispersion of single NV centers (SNV) in a density between 10 and 300 per 10000 µm², with typical spin coherence times (T2) exceeding 300 µm and a long T2* of 1~3 µm. We support for customization in single NV density, diamond size, and preferred polished faces {100},{111} or {110}.
Our ENV diamonds contains high density NV centres varying from 500 ppb to 5 ppm, with T2 ranging from 100 to 200 µm and T2* of 0.5 µm. We offer customized diamonds with major {100},{111} or {110} in different densities.
Contact: Ms. Zhu
Phone: 86-15921669765
E-mail: peggy@neocrystech.com
Whatsapp:kogin
Add: 2000 North Zhongshan Road, Putuo District, Shanghai, China Room 820, Medium Term Building
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